SIA913AD Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
V_GS = 5 V thru 2.5 V
12
4
V_GS = 2 V
9
3
SiA913ADJ
Vishay Siliconix
6
3
0
0.0
0.30
V_GS = 1.5 V
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
0.20
0.15
0.10
V_GS = 1.8 V
V_GS = 2.5 V
0.05
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 4.5 A
6
V_DS = 6 V
4
V_DS = 9.6 V
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 64723
S09-0141-Rev. A, 02-Feb-09
2
1
0
0.0
1200
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
C_iss
600
400
C_oss
C_rss
200
0
0
1.4
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.3
V_GS = 4.5 V, 2.5 V; I_D = 3.6 A
1.2
V_GS = 1.8 V; I_D = 1 A
1.1
V_GS = 1.5 V; I_D = 1 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3