SIA911AD Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10
2.0
SiA911ADJ
Vishay Siliconix
8
V_GS = 5 thru 2.5 V
V_GS = 2 V
6
4
V_GS = 1.5 V
2
0
0.0
0.30
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
0.20
0.15
V_GS = 1.8 V
V_GS = 2.5 V
0.10
V_GS = 4.5 V
0.05
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 3.5 A
6
V_DS = 10 V
V_DS = 5 V
4
V_DS = 15 V
2
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68968
S-82481-Rev. A, 13-Oct-08
1.5
1.0
0.5
0.0
0.0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
700
600
500
400
C_iss
300
200
100
0
0
C_oss
C_rss
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 2.8 A
1.4
1.2
1.0 _{VGS = 4.5 V}
0.8
V_GS = 1.8 V
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3