SIA444DJT Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
32
V_GS = 10 V thru 4 V
8
SiA444DJT
Vishay Siliconix
24
6
V_GS = 3 V
T_C = 25 °C
16
4
8
V_GS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.030
2
0
0.0
800
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.024
0.018
V_GS = 4.5 V
0.012
0.006
V_GS = 10 V
0.000
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 11 A
8
V_DS = 15 V
V_DS = 7.5 V
6
V_DS = 24 V
4
2
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
600
C_iss
400
200
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6 ^{ID = 7.4 A}
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3