SIA432DJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
V_GS = 10 thru 4 V
24
4
18
3
SiA432DJ
Vishay Siliconix
T_C = 25 °C
12
6
0
0.0
0.030
V_GS = 3 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.025
0.020
0.015
V_GS = 4.5 V
V_GS = 10 V
0.010
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 15 V
V_DS = 7.5 V
6
V_DS = 22.5 V
4
2
1
0
1.0
1000
800
T_C = 125 °C
T_C = - 55 °C
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
600
400
200
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 5 A
1.5
1.3
V_GS = 4.5 V, 10 V
1.1
2
0.9
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68697
S-81172-Rev. A, 26-May-08
www.vishay.com
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