SIA427ADJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 8 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
V_GS = 5 V thru 2 V
40
8
SiA427ADJ
Vishay Siliconix
30
V_GS = 1.5 V
20
10
0
0.0
0.06
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.05
0.04
0.03
V_GS = 1.2 V
V_GS = 1.5 V
V_GS = 1.8 V
0.02
0.01
0
0
V_GS = 4.5 V
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 12.3 A
4
V_DS = 2 V
3
V_DS = 4 V
2
V_DS = 6.4 V
1
0
0
10
20
30
40
Q_g - Total Gate Charge (nC)
Gate Charge
6
4
2
0
0.0
4000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3500
3000
2500
C_iss
2000
1500
C_oss
1000
C_rss
500
0
0
1.4
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.3
V_GS = 1.8 V, 4.5 V; I _D = 8.2 A
1.2
V_GS = 1.5 V; I_D = 1 A
1.1
1.0
V_GS = 1.2 V; I_D = 1 A
0.9
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63651
For more information please contact: [e-mail]
www.vishay.com
S12-1141-Rev. B, 21-May-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000