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SI9183 Datasheet, PDF (3/10 Pages) Vishay Siliconix – High-Performance, Size Saving 150-mA CMOS LDO Regulator
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Si9183
Vishay Siliconix
SPECIFICATIONS (TA = 25_C)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
VIN = VOUT(nom) + 1 V, IOUT = 1 mA
CIN = 1 mF, COUT = 2.2 mF, VSD = 1.5 V
Limits
−40 to 85_C
Tempa Minb Typc Maxb
Unit
f = 1 kHz
Room
60
Ripple Rejection
DVOUT/DVIN
IOUT = 150 mA
f = 10 kHz
Room
40
dB
f = 100 kHz
Room
30
Dynamic Line Regulation
DVO(line)
VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V
tR/tF = 5 ms, IOUT = 150 mA
Room
10
mV
Dynamic Load Regulation
DVO(load)
IOUT : 1 mA to 150 mA, tR/tF = 2 ms
Room
30
VOUT Turn-On-Time
tON
VIN = 4.3 V
VOUT = 3.3 V
w/o CBP Cap
CBP = 0.1 mF
Room
Room
5
1000
ms
Thermal Shutdown
Thermal Shutdown Junction Temp
Thermal Hysteresis
Short Circuit Current
tJ(s/d)
tHYST
ISC
VOUT = 0 V
Room
165
_C
Room
20
Room
400
mA
Shutdown Input
SD Input Voltage
SD Input Currente
Shutdown Hysteresis
VIH
VIL
IIL
IIH
VHYST
High = Regulator ON (Rising)
Low = Regulator OFF (Falling)
VSD = 0 V, Regulator OFF
VSD = 6 V, Regulator ON
Full
1.2
Full
VIN
V
0.4
Room
0.01
mA
Room
1.0
Full
100
mV
Notes
a. Room = 25_C, Full = −40 to 85_C.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Typical values for dropout voltage at VOUT w 2 V are measured at
VOUT = 2.5 V, while typical values for dropout voltage at VOUT < 2 V are measured at VOUT = 1.8 V.
d. Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the output voltage measured with a 1-V
differential, provided that VIN does not not drop below 2.0 V.
e. The device’s shutdown pin includes a typical 6-MW internal pull-down resistor connected to ground.
f. VOUT is defined as the output voltage of the DUT at 1 mA.
Document Number: 71258
S-40593—Rev. E, 29-Mar-04
www.vishay.com
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