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SI9105 Datasheet, PDF (3/7 Pages) Vishay Siliconix – 1-W High-Voltage Switchmode Regulator
Si9105
Vishay Siliconix
SPECIFICATIONSa
Parameter
Current Limit
Threshold Voltage
Delay to Outpute
Input Voltage
Input Leakage Current
Pre-Regulator Start-Up Current
VCC Pre-Regulator
Turn-Off Threshold Voltage
Undervoltage Lockout
VREG − VUVLO
Supply
Supply Current
Bias Current
SHUTDOWN Delay
SHUTDOWN Pulse Width
RESET Pulse Width
Latching Pulse Width
SHUTDOWN and RESET Low
Input Low Voltage
Input High Voltage
Input Current, Input Voltage High
Input Current. Input Voltage Low
MOSFET Switch
Breakdown Voltage
Drain-Source On Resistanceg
Drain Off Leakage Current
Drain Capacitance
Symbol
Test Conditions
Unless Otherwise Specified
DISCHARGE = −VIN = 0 V
VCC = 10 V, +VIN = 48 V
RBIAS = 820 kW , ROSC = 910 kW
Limits
Tempb Minc Typd Maxc Unit
VSOURCE
td
+VIN
+IIN
ISTART
VREG
VUVLO
VDELTA
RL = 100 W from DRAIN to VCC
VFB = 0 V
RL = 100 W from DRAIN to VCC
VSOURCE = 1.5 V, See Figure 1
IIN = 10 mA
VCC w 10 V
Pulse Width v 300 ms, VCC = 7 V
IPRE-REGULATOR = 10 mA
RL = 100 W from DRAIN to VCC
See Detailed Description
Room
0.8
1.0
1.2
V
Room
200
300
ns
Room
120
V
Room
10
mA
Room
8
15
mA
Room
7.5
9.3
9.7
Room
7.0
8.7
9.2
V
Room
0.25
0.5
ICC
IBIAS
tSD
tSW
tRW
tLW
VIL
VIH
IIH
IIL
VSOURCE = −VIN, See Figure 2
See Figure 3
VIN = 10 V
VIN = 0 V
Room
0.35
0.5
mA
Room
7.5
mA
Room
50
100
Room
50
Room
50
ns
Room
25
Room
Room
8.0
2.0
V
Room
1
5
mA
Room
−35
−25
V(BR)DSS
rDS(on)
IDSS
CDS
IDRAIN = 100 mA
IDRAIN = 100 mA
VDRAIN = 100 V
Full
200
220
V
Room
5
7
W
Room
10
mA
Room
35
pF
Notes
a. Refer to PROCESS OPTION FLOWCHART for additional information.
b. Room = 25_C, Cold and Hot = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. CSTRAY Pin 8 = v 5 pF
g. Temperature coefficient of rDS(on) is 0.75% per _C, typical.
Document Number: 70003
S-42030—Rev. H, 15-Nov-04
www.vishay.com
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