SI8425DB Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
V_GS = 5 V thru 2 V
V_GS = 1.5 V
15
10
5
0
0.0
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
4
2
0
0.0
0.050
4000
Si8425DB
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.040
0.030
0.020
0.010
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
8
I_D = 2 A
V_DS = 10 V
6
V_DS = 5 V
V_DS = 16 V
4
2
0
0
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
3200
C_iss
2400
1600
800
C_oss
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
V_GS = 4.2 V, 2.5 V; I_D = 2 A
1.2
1.1
V_GS = 1.8 V; I_D = 2 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63909
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www.vishay.com
S12-2180-Rev. A, 10-Sep-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000