SI7964DP Datasheet, PDF (3/8 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

Si7964DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
4000
0.025
0.020
0.015
0.010
0.005
V_GS = 10 V
3200
2400
1600
800
0.000
0
0 5 10 15 20 25 30 35 40
0
I_D - Drain Current (A)
On-Resistance vs. Drain Current
C_iss
C_oss
C_rss
10
20
30
40
50
6
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 30 V
I_D = 9.6 A
8
6
4
2
1.8
V_GS = 10 V
1.6
I_D = 9.6 A
1.4
1.2
1.0
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
40
0.04
T_J = 150 °C
T_J = 25 °C
10
0.03
I_D = 9.6 A
0.02
0.01
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
www.vishay.com
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