SI7923DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
Si7923DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.12
1200
Capacitance
0.10
1000
0.08
0.06
V_GS = 4.5 V
0.04
V_GS = 10 V
0.02
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
10
V_DS = 10 V
8
I_D = 6.4 A
800
C_iss
600
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 6.4 A
6
4
2
0
0
3
6
9
12
15
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.12
10
T_J = 150_C
0.09
0.06
I_D = 6.4 A
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72622
S-51129—Rev. B, 13-Jun-05
0.03
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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