SI7886DP Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si7886DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
8000
Capacitance
0.008
0.006
0.004
0.002
V_GS = 4.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
5
V_DS = 15 V
4
I_D = 20 A
6000
C_iss
4000
2000
C_rss
C_oss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 20 A
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.025
T_J = 150_C
10
0.020
0.015
T_J = 25_C
0.010
0.005
I_D = 20 A
1
0.00
0.2
0.4
0.6
0.8
1.0 1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71842
S-20350—Rev. A, 18-Apr-02
0.000
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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