SI7852DP-T1-GE3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 80-V (D-S) MOSFET

Si7852DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.04
3000
0.03
0.02
0.01
V_GS = 6 V
V_GS = 10 V
0.00
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2500
2000
1500
1000
500
0
0
C_iss
C_rss
C_oss
20
40
60
80
V_DS - Drain-to-Source Voltage (V)
Capacitance
20
V_DS = 40 V
I_D = 10 A
16
2.5
V_GS = 10 V
I_D = 10 A
2.0
12
1.5
8
1.0
4
0.5
0
0
100
15
30
45
60
Q_g - Total Gate Charge (nC)
Gate Charge
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
10
T_J = 150 °C
0.06
I_D = 10 A
1
0.04
T_J = 25 °C
0.1
0.02
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71627
S09-0268-Rev. E, 16-Feb-09
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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