SI7852ADP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 80-V (D-S) MOSFET

Si7852ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
V_GS = 10 V thru 7 V
48
8
6V
36
6
T_C = 25 °C
24
4
12
5V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = 125 °C
2
T_C = - 55 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.022
2500
0.020
2000
C_iss
0.018
0.016
V_GS = 8 V
0.014
V_GS = 10 V
0.012
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 20 V
V_DS = 40 V
6
V_DS = 60 V
4
1500
1000
500
C_oss
C_rss
0
0
12
24
36
48
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
V_GS = 10 V
1.4
V_GS = 8 V
1.1
2
0.8
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73988
S09-0223-Rev. C, 09-Feb-09
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - JunctionTemperature (°C)
On-Resistance vs. Junction Temperature
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