SI7840DP Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

New Product
Si7840DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
2500
Capacitance
0.016
0.012
0.008
0.004
V_GS = 4.5 V
V_GS = 10 V
2000
C_iss
1500
1000
500
C_oss
C_rss
0.000
0
8
16
24
32
40
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 18 A
6
4
2
0
0
6
12
18
24
30
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
10
T_J = 150_C
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 18 A
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
I_D = 18 A
0.02
T_J = 25_C
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71624
S-05804—Rev. C, 25-Feb-02
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
www.vishay.com
3