SI7790DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
5
V_GS = 10 thru 4 V
56
4
Si7790DP
Vishay Siliconix
42
3
28
14
0
0.0
0.0060
V_GS = 3 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0054
0.0048
V_GS = 4.5 V
0.0042
0.0036
V_GS = 10 V
0.0030
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
6
4
V_DS = 10 V
V_DS = 20 V
V_DS = 30 V
2
2
T_C = 25 °C
1
T_C = 125 °C
0
0
1
2
T_C = - 55 °C
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6600
5500
C_iss
4400
3300
2200
1100
C_oss
0 ^Crss
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 15 A
V_GS = 10 V
1.5
V_GS = 4.5 V
1.2
0.9
0
0
13
26
39
52
65
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68664
S-81217-Rev. A, 02-Jun-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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