SI7748DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
10
V_GS = 10 thru 4 V
64
8
Si7748DP
Vishay Siliconix
48
32
V_GS = 3 V
16
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.008
0.007
6
T_C = 25 °C
4
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
4500
C_iss
3600
0.006
0.005
0.004
V_GS = 4.5 V
V_GS = 10 V
0.003
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
6
4
2
V_DS = 10 V
V_DS = 15 V
V_DS = 20 V
2700
1800
C_oss
900
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0.6
0
0.0
12.4
24.8
37.2
49.6
62.0
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68785
S-81714-Rev. A, 04-Aug-08
0.3
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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