SI7682DP-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
1.2
40
V_GS = 10 thru 4 V
30
20
10
0
0.0
3V
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.016
2000
0.014
1600
Si7682DP
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
1.4
1.8
2.2
2.6
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.012
0.010
V_GS = 4.5 V
0.008
V_GS = 10 V
0.006
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 11 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
1200
800
400
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
I_D = 12 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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