SI7655DN Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
V_GS = 10 V thru 3 V
80
16
Si7655DN
Vishay Siliconix
60
40
V_GS = 2 V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
0.016
0.012
V_GS = 2.5 V
0.008
0.004
V_GS = 4.5 V
V_GS = 10 V
0.000
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 10 V
6
V_DS = 5 V
4
V_DS = 16 V
2
0
0
30
60
90
120
150
Q_g - Total Gate Charge (nC)
Gate Charge
12
8
4
0
0.0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
9000
7500
C_iss
6000
4500
3000
1500
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
I_D = 20 A
1.3
1.2
1.1
V_GS = 10 V
V_GS = 4.5 V
V_GS = 2.5 V
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63617
For technical questions, contact: [e-mail]
www.vishay.com
S12-2393-Rev. B, 15-Oct-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000