SI7633DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si7633DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
V_GS = 10 thru 4 V
80
1.2
T_C = - 55 °C
1.0
0.8
60
0.6
40
T_C = 25 °C
0.4
20
0
0.0
V_GS = 3 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
T_C = 125 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.008
0.006
0.004
0.002
V_GS = 4.5 V
V_GS = 10 V
12 000
C_iss
8000
4000
C_rss
C_oss
0.000
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
6
V_DS = 5 V
V_DS = 10 V
4
V_DS = 15 V
2
0
0
50
100
150
200
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 69008
S-82667-Rev. A, 03-Nov-08
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 20 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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