SI7615DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
10
V_GS =10 V thru 3 V
64
8
48
6
32
VGS = 2 V
4
16
2
Si7615DN
Vishay Siliconix
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
0.016
0
0.0
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
8500
Ciss
6800
0.012
0.008
V_GS = 2.5 V
0.004
0.000
0
16
VGS = 4.5 V
V_GS = 10 V
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
VDS = 10 V
V_DS = 15 V
6
5100
3400
1700
Coss
Crss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 20 A
1.3
VGS = 2.5 V
V_GS = 10 V
1.1
4
0.9
VDS = 20 V
2
0.7
0
0
25
50
75
100
125
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 64722
S09-1224-Rev. C, 29-Jun-09
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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