SI7456CDP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
V_GS = 10 V thru 5 V
40
8
Si7456CDP
Vishay Siliconix
30
20
10
0
0
0.060
V_GS = 4 V
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
2
0
0
1300
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.048
0.036
0.024
V_GS = 4.5 V
0.012
V_GS = 7.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 25 V
6
V_DS = 50 V
V_DS = 75 V
4
1040
C_iss
780
520
C_oss
260
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
2
0.8
0
0.0
3.2
6.4
9.6
12.8
16.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65941
S10-0785-Rev. A, 05-Apr-10
www.vishay.com
3