SI7414DN Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

New Product
Si7414DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
1200
Capacitance
0.05
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
1000
800
600
400
200
C_oss
C_iss
C_rss
0.00
0
5
10
15
20
25
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 30 V
8
I_D = 8.7 A
6
4
2
0
0
4
8
12
16
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
0
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
V_GS = 10 V
I_D = 8.7 A
1.6
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.08
T_J = 150_C
10
0.06
0.04
I_D = 8.7 A
T_J = 25_C
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71738
S-04764—Rev. A, 08-Oct-01
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
www.vishay.com
3