SI7404DN-T1 Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 30 V (D-S) Fast Switching MOSFET

Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
0.05
3000
0.04
0.03
0.02
0.01
0.00
0
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 10 V
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 13.3 A
8
6
4
2
2500
2000
C_iss
1500
1000
500
0
0
C_oss
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V
I_D = 13.3 A
1.4
1.2
1.0
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
50
T_J = 150 °C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
I_D = 5 A
0.03
I_D = 13.3 A
0.02
T_J = 25 °C
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71658
www.vishay.com
S11-2045-Rev. G, 17-Oct-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000