SI7384DP Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
2200
0.016
1760
Si7384DP
Vishay Siliconix
C_iss
0.012
0.008
V_GS = 4.5 V
V_GS = 10 V
0.004
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
5
V_DS = 15 V
I_D = 18 A
4
3
2
1
0
0
60
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
1320
880
440
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V
I_D = 18 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.030
T_J = 150 °C
10
T_J = 25 °C
0.024
0.018
0.012
0.006
I_D = 18 A
1
0.00 0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72656
S-80439-Rev. C, 03-Mar-08
www.vishay.com
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