SI7380ADP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7380ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
1.2
60
1.0
50
V_GS = 10 thru 2 V
0.8
40
0.6
30
0.4
20
10
0.2
0
0.0
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0
0.0
25 °C
T_C = 125 °C
- 55 °C
0.3
0.6
0.9
1.2
1.5
1.8
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0030
0.0028
V_GS = 4.5 V
9500
C_iss
7600
0.0026
0.0024
V_GS = 10 V
5700
3800
0.0022
0.0020
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
0
0
25
50
75
100
125
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73408
S-80439-Rev. B, 03-Mar-08
1900
C_oss
0 ^Crss
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
I_D = 20 A
V_GS = 10 V
1.4
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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