SI7348DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
Si7348DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
1000
0.04
800
Capacitance
C_iss
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
600
400
C_oss
C_rss
200
0.00
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
6.0
V_DS = 10 V
4.8
I_D = 14 A
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 14 A
3.6
1.2
2.4
1.0
1.2
0.8
0.0
0.0
1.6
3.2
4.8
6.4
8.0
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
0.6
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.040
0.032
0.024
I_D = 14 A
0.016
0.008
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72129
S-03591—Rev. A, 31-Mar-03
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3