SI7336ADP-T1-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7336ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.005
7000
0.004
0.003
0.002
V_GS = 4.5 V
V_GS = 10 V
0.001
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
5
V_DS = 15 V
I_D = 20 A
6000
C_iss
5000
4000
3000
2000
1000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
1.4 ^ID ^{= 25 A}
4
1.2
3
1.0
2
0.8
1
0
0 5 10 15 20 25 30 35 40 45
Q_g - Total Gate Charge (nC)
Gate Charge
50
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.015
10
T_J = 150 °C
0.012
0.009
I_D = 25 A
1
T_J = 25 °C
0.006
0.003
0.1
0.00 0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73152
S-80440-Rev. F, 03-Mar-08
www.vishay.com
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