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SI7212DN_09 Datasheet, PDF (3/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET
Si7212DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
1200
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0.00
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
1000
Ciss
800
600
400
Coss
200
0 Crss
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
10
VDS = 15 V
ID = 6.8 A
8
1.6
VGS = 10 V
ID = 6.8 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
20
TJ = 150 °C
10
TJ = 25 °C
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
ID = 2 A
0.04
ID = 6.8 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73128
S09-1815-Rev. F, 14-Sep-09
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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