SI7178DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
5
V_GS = 10 thru 7 V
48
4
Si7178DP
Vishay Siliconix
36
24
12
0
0
0.015
V_GS = 6 V
V_GS = 5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
3
2
T_C = 125 °C
1
T_C = 25 °C
0
0
2
4
T_C = - 55 °C
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
4000
0.014
0.013
V_GS = 8 V
3200
C_iss
2400
0.012
V_GS = 10 V
1600
0.011
0.010
0
12
24
36
48
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
6
V_DS = 25 V
V_DS = 50 V
V_DS = 75 V
4
800
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
V_GS = 10 V
1.4
V_GS = 8 V
1.1
2
0.8
0
0
9
18
27
36
45
54
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69951
S-80678-Rev. A, 31-Mar-08
www.vishay.com
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