SI7145DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
V_GS = 3 V
V_GS = 10 V thru 4 V
80
8
Si7145DP
Vishay Siliconix
60
6
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0035
0.0031
V_GS = 4.5 V
4
2
0
0.0
20 000
16 000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.0027
12 000
0.0023
0.0019
V_GS = 10 V
0.0015
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 20 A
8
6
V_DS = 15 V
V_DS = 10 V
4
V_DS = 20 V
2
8000
4000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 25 A
1.3
V_GS = 10 V
1.1
V_GS = 4.5 V
0.9
0.7
0
0
60
120
180
240
300
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 64814
S09-0872-Rev. A, 18-May-09
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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