SI7135DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si7135DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1.2
V_GS = 10 thru 4 V
80
60
40
1.0
T_C = - 55 °C
0.8
0.6
T_C = 25 °C
0.4
20
0
0.0
V_GS = 3 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
T_C = 125 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
0.0060
0.0055
0.0050
V_GS = 4.5 V
0.0045
0.0040
0.0035
0.0030
V_GS = 10 V
0.0025
0.0020
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 28 A
8
6
V_DS = 7.5 V
V_DS = 15 V
V_DS = 22.5 V
4
12 000
C_iss
8000
4000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
2
0
0
50
100
150
200
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68807
S-81588-Rev. A, 07-Jul-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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