SI7121DN-T1-GE3 Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si7121DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
50
40
30
20
10
0
0
0.05
V_GS = 10 thru 5 V
V_GS = 4 V
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
5
4
3
2
V_GS = 125 °C
1
V_GS = 25 °C
0
0
1
2
V_GS = - 55 °C
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
0.04
0.03
V_GS = 4.5 V
0.02
V_GS = 10 V
0.01
0
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
6
4
V_DS = 10 V
V_DS = 20 V
V_DS = 15 V
2400
C_iss
1800
1200
600
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 10 A
1.4
V_GS = - 10 V
1.2
V_GS = - 4.5 V
1.0
2
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69956
For technical questions, contact: [e-mail]
www.vishay.com
S13-2051-Rev. D, 30-Sep-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000