SI7120DN-T1-GE3 Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si7120DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
3000
0.08
0.06
0.04
0.02
0.00
0
V_GS = 4.5 V
V_GS = 10 V
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 10 V
8
I_D = 10 A
6
4
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
40
2500
C_iss
2000
1500
1000
500
C_oss
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
1.8
V_GS = 10 V
I_D = 10 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
T_J = 150 °C
10
0.08
0.06
I_D = 10 A
0.04
T_J = 25 °C
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0.0
2.0
4.0
6.0
8.0
10.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72771
S-80581-Rev. E, 17-Mar-08
www.vishay.com
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