SI7108DN-T1-E3 Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

Si7108DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.008
3000
0.007
0.006
0.005
V_GS = 4.5 V
2500
C_iss
2000
0.004
0.003
0.002
0.001
0.000
0
V_GS = 10 V
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1500
1000
500
0
0
C_rss
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 10 V
8
I_D = 22 A
1.6
V_GS = 10 V
1.4
I_D = 22 A
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
60
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.015
T_J = 150 °C
10
T_J = 25 °C
0.012
0.009
0.006
0.003
I_D = 22 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73216
S-80581-Rev. E, 17-Mar-08
www.vishay.com
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