SI7107DN Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

Si7107DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
10 20 30 40 50 60 70
5000
4000
C_iss
3000
2000
1000
C_rss
C_oss
0
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
V_DS = 10 V
4
I_D = 15.3 A
1.6
V_GS = 4.5 V
1.4
I_D = 15.3 A
3
1.2
2
1.0
1
0.8
0
0 5 10 15 20 25 30 35 40
Q_g - Total Gate Charge (nC)
Gate Charge
40
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
T_J = 150 °C
10
0.04
I_D = 5 A
0.03
I_D = 15.3 A
0.02
T_J = 25 °C
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73041
S10-0347-Rev. E, 15-Feb-10
www.vishay.com
3