SI6991DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
Si6991DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
1200
Capacitance
0.08
0.06
0.04
V_GS = 4.5 V
V_GS = 10 V
0.02
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
6
V_DS = 15 V
5
I_D = 4.2 A
4
3
2
1
1000
800
C_iss
600
400
200
0
0
C_rss
6
C_oss
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 4.2 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10
T_J = 150_C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.15
0.12
1
T_J = 25_C
0.09
I_D = 4.2 A
0.06
0.03
0.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Document Number: 72230
S-31066—Rev. A, 26-May-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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