SI6975DQ-T1-E3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
4000
0.08
3200
Si6975DQ
Vishay Siliconix
C_iss
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
0.00
0
V_GS = 4.5 V
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
V_DS = 6 V
I_D = 5.1 A
4
2400
1600
C_oss
800
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.60
1.40
V_GS = 4.5 V
I_D = 5.1 A
3
1.20
2
1.00
1
0.80
0
0
30
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
10
T_J = 25 °C
0.60
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
I_D = 5.1 A
0.04
0.02
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71319
S-81221-Rev. B, 02-Jun-08
www.vishay.com
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