SI6956DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

Si6956DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
6V
16
16
V_GS = 10, 9 ,8 ,7 V
12
5V
12
Transfer Characteristics
T_C = –55_C
25_C
125_C
8
4V
4
3V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
0.25
0.20
V_GS = 4.5 V
0.15
0.10
0.05
V_GS = 10 V
0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
10
V_GS = 10 V
8
I_D = 2.5 A
6
4
2
8
4
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
1000
Capacitance
800
600
C_oss
400
C_iss
200
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 2.5 A
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
Q_g – Total Gate Charge (nC)
Document Number: 70173
S-00652—Rev. E, 27-Mar-00
0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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