SI6926ADQ_08 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6926ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
1200
0.04
0.03
V_GS = 2.5 V
V_GS = 3.0 V
0.02
0.01
V_GS = 4.5 V
0.00
0.0
4.0
8.0
12.0
16.0
20.0
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1000
C_iss
800
600
400
200
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
V_DS = 10 V
5
I_D = 4.5 A
4
3
2
1
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
1.6
V_GS = 4.5 V
I_D = 4.5 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
20
10
T_J = 150 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.08
0.07
0.06
I_D = 4.5 A
0.05
0.04
0.03
0.02
0.01
0.00
0
1
2
3
4
5
6
7
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72754
S-81056-Rev. B, 12-May-08
www.vishay.com
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