SI6924AEDQ Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) Battery Switch, ESD Protection

New Product
Si6924AEDQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "4.5 V
V_DS = 0 V, V_GS = "14 V
V_DS = 22.4 V, V_GS = 0 V
V_DS = 22.4 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 5 V
V_GS = 4.5 V, I_D = 4.6 A
V_GS = 3.0 V, I_D = 4.3 A
V_GS = 2.5 V, I_D = 4.1 A
V_DS = 10 V, I_D = 4.6 A
I_S = 1.2 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.6 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
Min Typ Max Unit
0.6
1.5
V
"1
mA
"20
mA
1
mA
5
10
A
0.022
0.033
0.025
0.038
W
0.029
0.042
25
S
0.7
1.1
V
6.5
10
1.2
nC
1.5
0.95
1.5
1.4
2.1
ms
7
11
3.1
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
Gate-Current vs. Gate-Source Voltage
10,000
0.015
1,000
100
10
0.010
1
Gate Current vs. Gate-Source Voltage
T_J = 150_C
0.005
0.1
0.01
T_J = 25_C
0.000
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
0.001
0
2
4
6
8
10 12 14
V_GS - Gate-to-Source Voltage (V)
Document Number: 72215
S-03985—Rev. A, 13-May-03
www.vishay.com
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