SI6433BDQ_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
1500
Si6433BDQ
Vishay Siliconix
0.08
0.06
V _GS = 2.5 V
1200
C_iss
900
0.04
0.02
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
V_DS = 6 V
5
I_D = 4.8 A
4
3
2
1
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
T_J = 25 °C
1
600
300
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 4.8 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.15
0.12
0.09
I_D = 4.8 A
0.06
0.03
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72511
S-80682-Rev. C, 31-Mar-08
www.vishay.com
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