SI5935CDC Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
3.0
V_GS = 5 thru 2 V
8
2.4
Si5935CDC
Vishay Siliconix
6
4
V_GS = 1.5 V
2
0
0
0.20
V_GS = 1 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.12
V_GS = 1.8 V
0.08
V_GS = 2.5 V
V_GS = 4.5 V
0.04
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 3.1 A
4
V_DS = 10 V
3
V_DS = 16 V
2
1
1.8
1.2
0.6
0.0
0.0
900
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
750
600
C_iss
450
300
C_oss
150
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
V_GS = - 2.5 V, I_D = - 2.8 A
1.3
1.1
V_GS = - 4.5 V, I_D = - 3.1 A
0.9
0
012345678
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68965
S-82573-Rev. A, 27-Oct-08
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3