SI5903DC Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.4
600
Capacitance
V_GS = 2.5 V
0.3
0.2
V_GS = 3.6 V
500
C_iss
400
300
V_GS = 4.5 V
0.1
0.0
0
2
4
6
8
10
I_D -- Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 2.1 A
4
200
C_oss
100
C_rss
0
0
4
8
12
16
20
V_DS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 2.1 A
1.4
3
1.2
2
1.0
1
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q_g -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
T_J = 150_C
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD -- Source-to-Drain Voltage (V)
Document Number: 71054
S-21251—Rev. B, 05-Aug-02
0.6
--50 --25 0
25 50 75 100 125 150
T_J -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
I_D = 2.1 A
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
1
2
3
4
5
V_GS -- Gate-to-Source Voltage (V)
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2-3