SI5902BDC_10 Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
Si5902BDC
Vishay Siliconix
16
V_GS = 10 V thru 6 V
5V
12
8
4
0
0.0
0.20
4V
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.12
0.08
0.04
V_GS = 4.5 V
V_GS = 10 V
0.00
0
5
10
15
20
I_D - Drain Current (A)
On Resistance vs. Drain Current
10
V_DS = 15 V, I_D = 3.6 A
8
6
4
V_DS = 24 V, I_D = 3.6 A
2
0
0
1
2
3
4
5
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
4
3
T_C = 25 °C
2
T_C = 125 °C
1
T_C = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
300
250
C_iss
200
150
100
C_oss
50
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V, 4.5 V
I_D = 3.1 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3