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SI5468DC Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
Si5468DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 V thru 4 V
25
20
15
VGS = 3 V
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
TC = - 55 °C
4
TC = 25 °C
2
TC = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.035
600
0.030
0.025
VGS = 4.5 V
VGS = 10 V
0.020
0.015
0.010
0
5
10
15
20
25
30
ID - Drain Current (A)
On Resistance vs. Drain Current
10
ID = 7.8 A
8
6
VDS = 15 V
VDS = 24 V
4
2
500
Ciss
400
300
200
Coss
100
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 6.8 A
1.6
1.4
1.2
VGS = 10 V
VGS = 4.5 V
1.0
0.8
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69072
S09-0316-Rev. A, 02-Mar-09
www.vishay.com
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