SI5463EDC_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.25
2000
Capacitance
0.20
V_GS = 1.8 V
0.15
0.10
0.05
V_GS = 2.5 V
V_GS = 3.6 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D -- Drain Current (A)
Gate Charge
12
V_DS = 10 V
I_D = 4.0 A
9
6
3
1500
C_iss
1000
500
C_oss
C_rss
0
0
4
8
12
16
20
V_DS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 4.0 A
1.4
1.2
1.0
0.8
0
0
5
10
15
20
25
Q_g -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
T_J = 150_C
1
T_J = 25_C
0.1
0.6
--50 --25 0
25 50 75 100 125 150
T_J -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
0.10
I_D = 4.0 A
0.05
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD -- Source-to-Drain Voltage (V)
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
0.00
0
2
4
6
8
V_GS -- Gate-to-Source Voltage (V)
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