SI5458DU Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
V_GS = 10 V thru 4 V
4
15
3
10
2
5
V_GS = 3 V
1
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.06
0
0
400
0.05
300
V_GS = 4.5 V
0.04
200
V_GS = 10 V
0.03
100
Si5458DU
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
C_oss
0.02
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 7.1 A
8
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
V_GS = 10 V; I_D = 7.1 A
1.5
6
V_DS = 15 V
V_DS = 24 V
4
2
1.3
1.1
V_GS = 4.5 V; I_D = 6.3 A
0.9
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65019
S09-1392-Rev. A, 20-Jul-09
www.vishay.com
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