SI5447DC-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si5447DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30
0.25
V_GS = 1.8 V
0.20
0.15
V_GS = 2.5 V
1200
1000
C_iss
800
600
0.10
0.05
0.00
0
V_GS = 4.5 V
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current
400
200
C_rss
0
0
C_oss
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
V_DS = 10 V
I_D = 3.5 A
4
1.6
V_GS = 4.5 V
I_D = 3.5 A
1.4
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
20
T_J = 150 °C
10
T_J = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.30
0.25
0.20
I_D = 3.5 A
0.15
0.10
0.05
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71256
S09-0129-Rev. C, 02-Feb-09
www.vishay.com
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