SI5445DC Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si5445DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
3000
Capacitance
0.08
V_GS = 1.8 V
0.06
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D -- Drain Current (A)
5
V_DS = 4 V
I_D = 5.2 A
4
Gate Charge
2500
C_iss
2000
1500
1000
C_oss
500
C_rss
0
0
2
4
6
8
V_DS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.2 A
1.4
3
1.2
2
1.0
1
0.8
0
0
4
8
12
16
20
Q_g -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
--50 --25 0
25 50 75 100 125 150
T_J -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 5.2 A
0.04
T_J = 25_C
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD -- Source-to-Drain Voltage (V)
Document Number: 71063
S-21251—Rev. B, 05-Aug-02
0.00
0
1
2
3
4
5
V_GS -- Gate-to-Source Voltage (V)
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