SI5445BDC_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
Si5445BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16
2000
Capacitance
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
V_GS = 1.8 V
4
8
V_GS = 2.5 V
V_GS = 4.5 V
12
16
20
1600
C_iss
1200
800
400
C_rss
C_oss
0
012345678
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 5.2 A
4
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.2 A
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
18
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 73251
S-50133—Rev. A, 24-Jan-05
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.16
0.14
0.12
0.10
0.08 ^{ID = 2 A}
0.06
I_D = 5.2 A
0.04
0.02
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
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